MOSFETs Silicon N-Channel MOS (DTMOS)
TK12V60W
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.
265 Ω (typ.
) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
6 mA)
3.
Packaging and Internal Circuit
TK12V60W
DFN8x8
1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink)
Notice: Please use the source1 pin for gate input signal return.
Make sure that the main current flows into the source2 pins.
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-...