TK16J55D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK16J55D
Switching
Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.
31 Ω (typ.
) • High forward transfer admittance: |Yfs| = 6.
5 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
2.
0
1.
0
Unit: mm
15.
9 MAX.
Ф3.
2 ± 0.
2
4.
5
20.
0 ± 0.
3
9.
0
2.
0
3.
3 MAX.
20.
5 ± 0.
5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche cu...