TK150F04K3L
MOSFETs Silicon N-channel MOS (U-MOS)
TK150F04K3L
1.
Applications
• • • Switching Voltage
Regulators DC-DC Converters Motor Drivers
2.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.
7 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-220SM(W)
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature ...