TK58E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK58E06N1
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.
4 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (...