MOSFETs Silicon N-Channel MOS (π-MOS)
TK1Q90A
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 6.
7 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 1.
0 S (typ.
) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK1Q90A
1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S)
New PW-Mold2
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
1
A
Drain current (pulsed)...