RQ3E160AD 　　Nch 30V 16A Middle Power MOSFET VDSS RDS(on)(Max.
) ID PD 30V 4.
5mΩ ±16A 2W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package.
4) Pb-free lead plating ; RoHS compliant lOutline HSMT8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction tempe...

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