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Part Number
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TK100A08N1 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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MOSFETs |
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Published
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Sep 11, 2014 |
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Datasheet
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TK100A08N1
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Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain ...
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