Part Number
|
TK65A10N1 |
Manufacturer
|
Toshiba Semiconductor |
Title
|
Silicon N-Channel MOSFET |
Description
|
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK65A10N1
1. Applications
• Switching Voltage Regulators
2....
|
Features
|
(1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VD...
|
Published
|
Sep 11, 2014 |
Datasheet
|
TK65A10N1 PDF File
|
Features
(1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TK65A10N1
1: Gat...
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