TK13A45D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A45D
Switching
Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.
38 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 ±30 13 52 45 372 13 4.
5 150 −55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)...