TK4A53D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A53D
Switching
Regulator Applications
Ф3.
2 ± 0.
2 10 ± 0.
3
Unit: mm
2.
7 ± 0.
2 A 3.
9 3.
0 1.
14 ± 0.
15 2.
8 MAX.
2.
54 1 2 3 2.
6 ± 0.
1 13 ± 0.
5 0.
69 ± 0.
15 Ф0.
2 M A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 4 16 35 252 4 3.
5 150 −55 to 150 Unit V V A W mJ A mJ °C °C
2.
54 0.
64 ± 0.
15
15.
0 ± 0.
3
• • • •
Low drain-source ON-resistance: RDS (ON) = 1.
3 Ω(typ.
) High forward transfer admittance: |Yfs| = 3.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 525 ...