SSM6J412TU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
Unit: mm
+0.
1 0.
3-0.
05
• 1.
5-V drive • Low ON-resistance: RDS(ON) = 99.
6 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 67.
8 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 51.
4 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 42.
7 mΩ (max) (@VGS = -4.
5 V)
2.
1±0.
1 1.
7±0.
1
1
6
2
5
2.
0±0.
1 1.
3±0.
1 0.
65 0.
65
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
3
4
+0.
06 0.
16-0.
05
0.
7±0.
05
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
-4.
0
A
Pulse
IDP (Note 1)
-16.
0
Power dissipation
PD (Note 2)
1
W
Channel tempera...