Part Number
|
SSM6J414TU |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Sep 12, 2014 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J414TU
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V gate...
|
Datasheet
|
SSM6J414TU
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J414TU
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 54 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 22.
5 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Pin Configuration
UF6
SSM6J414TU
1, 2, 5, 6: Drain 3: Gate 4: Source
Start of commercial production
2012-06
1
2014-04-04
Rev.
4.
0
SSM6J414TU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
Drain current (DC)
ID
-6
...
Similar Datasheet