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Part Number
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SSM6J402TU |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon P-Channel MOSFET |
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Published
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Sep 14, 2014 |
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Detailed Description
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MOSFETs Silicon P-Channel MOS
SSM6J402TU
1. Applications
• DC-DC Converters • High-Speed Switching
2. Features
(1) 4.0-V...
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Datasheet
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SSM6J402TU
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Overview
MOSFETs Silicon P-Channel MOS
SSM6J402TU
1.
Applications
• DC-DC Converters • High-Speed Switching
2.
Features
(1) 4.
0-V drive (2) Low drain-source on-resistance
: RDS(ON) = 225 mΩ (max) (@VGS = -4 V) RDS(ON) = 117 mΩ (max) (@VGS = -10 V)
3.
Packaging and Pin Assignment
UF6
SSM6J402TU
1,2,5,6: Drain 3: Gate 4: Source
©2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2008-01
2022-07-04 Rev.
1.
0
SSM6J402TU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-30
V
VGSS
±20
V
Drain current (DC)
ID
-2.
0
A
Drain current (pulsed)
IDP
-...
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