SSM6J503NU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J503NU
Power Management Switch Applications
• 1.
5V drive • Low ON-resistance: RDS(ON)= 89.
6 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 57.
9 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 41.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 32.
4 mΩ (max) (@VGS = -4.
5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
−20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
−6.
0
A
Pulse
IDP (Note 1)
-24.
0
Power Dissipation
PD (Note 2)
1
W
t ≦10s
2
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55 to 150
°C
1,2,5,6: Drain 3: Gate
Note: Using...