Part Number
|
SSM3K56MFV |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Sep 14, 2014 |
Detailed Description
|
MOSFETs Silicon N-Channel MOS
SSM3K56MFV
1. Applications
• High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage...
|
Datasheet
|
SSM3K56MFV
|
Overview
MOSFETs Silicon N-Channel MOS
SSM3K56MFV
1.
Applications
• High-Speed Switching
2.
Features
(1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 235 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.
5 V)
3.
Packaging and Pin Configuration
VESM
SSM3K56MFV
1.
Gate 2.
Source 3.
Drain
Start of commercial production
2013-02
1
2014-04-04
Rev.
2.
0
SSM3K56MFV
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±8
Drain current (DC)
(Note 1)
ID
800
mA
Drain curr...
Similar Datasheet