SSM5N05FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM5N05FU
High Speed Switching Applications
· · · Small package Low on resistance : Ron = 0.
8 Ω (max) (@VGS = 4 V) : Ron = 1.
2 Ω (max) (@VGS = 2.
5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ±12 400 800 300 150 -55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-2L1B
Note1: Total rating, mounted on FR4 board 2 (25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu Pad: 0.
32 mm ´ 5)
Weight...