S T M7822
S amHop Microelectronics C orp.
Arp,20 2005 ver1.
1
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
14A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
6.
5 @ V G S = 10V 7.
5 @ V G S = 4.
5V
R ugged and reliable.
S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
a
S ymbol Vspike V DS V GS ID IDM IS PD T J ,...