WT7822AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free D 1 3 DRAIN CURRENT 14 AMPERES DRAIN SOURCE VOLTAGE 25 VOLTAGE S S 8 7 D 2 D 6 S Features: *Super high dense cell design for low RDS(ON) R DS(ON) 7 mΩ@VGS=10V R DS(ON) 9 mΩ@VGS=4.
5V *Rugged and Reliable *SO-8 Package D Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VSpike4 VDS VGS ID IDM IS PD R θJA TJ, Tstg Value...

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