SSM6N25TU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6N25TU
High Speed Switching Applications
• Optimum for high-density mounting in small packages
• Low on-resistance:
Ron = 395mΩ (max) (@VGS = 1.
8 V) Ron = 190mΩ (max) (@VGS = 2.
5 V) Ron = 145mΩ (max) (@VGS = 4.
0 V)
Unit: mm 2.
1±0.
1 1.
7±0.
1
+0.
1 0.
3-0.
05
2.
0±0.
1 1.
3±0.
1 0.
65 0.
65
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
1
6
2
5
Characteristics
Symbol
Rating
Unit
3
4
+0.
06 0.
16-0.
05
0.
7±0.
05
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
± 12
V
Drain current
DC Pulse
Drain power dissipation
Channel temperature
ID
0.
5
A
IDP
1.
5
PD
500
mW
(Note 1)
Tch
...