CEM9936A
Dual N-Channel Enhancement Mode Field Effect
Transistor FEATURES
30V, 5.
4A, RDS(ON) = 40mΩ @VGS = 10V.
RDS(ON) = 55mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 8 D1 7 D2 6 D2 5
5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±20
5.
4 22 2.
0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Therma...