Si4394DY Vishay Siliconix N-Channel Reduced Qgd, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.
00825 at VGS = 10 V 0.
00975 at VGS = 4.
5 V ID (A) 15 14 FEATURES • Extremely Low Qgd for Switching Losses • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server • Synchronous Rectification SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4394DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuou...

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