SSM3K128TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM3K128TU
○ High-Speed Switching Applications ○ Power Management Switch Applications
• • 4.
0V drive Low ON-resistance : Ron = 360mΩ (max) (@VGS = 4.
0V)
0.
65±0.
05 2.
1±0.
1 1.
7±0.
1
UNIT: mm
: Ron = 217mΩ (max) (@VGS = 10V)
2.
0±0.
1
1 3
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 30 ±20 1.
5 3.
0 500 150 −55~150 Unit
2
V A mW °C °C
0.
7±0.
05
V
UFM
JEDEC JEITA TOSHIBA
1.
Gate 2.
Source 3.
Drain ― ―
Note 1: Mounted on an FR4 board (25.
4...