Part Number
|
SSM6K504NU |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Sep 18, 2014 |
Detailed Description
|
MOSFETs Silicon N-Channel MOS (U-MOS�-H)
SSM6K504NU
1. Applications
• High-Speed Switching
2. Features
(1) AEC-Q101 qual...
|
Datasheet
|
SSM6K504NU
|
Overview
MOSFETs Silicon N-Channel MOS (U-MOS�-H)
SSM6K504NU
1.
Applications
• High-Speed Switching
2.
Features
(1) AEC-Q101 qualified (Note 1) (2) 4.
5 V gate drive voltage.
(3) Low drain-source on-resistance
: RDS(ON) = 26 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 19.
5 mΩ (max) (@VGS = 10 V)
Note 1: For detail information, please contact our sales.
3.
Packaging and Pin Assignment
UDFN6B
SSM6K504NU
1.
2.
5.
6 Drain 3.
Gate 4.
Source
©2022-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2023-01-18 Rev.
3.
0
SSM6K504NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-sourc...
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