INCHANGE Semiconductor
Product Specification
isc Silicon
PNP Power
Transistor
2SA1964
DESCRIPTION ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC5248
APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
CollectorBase Voltage
160
V
VCEO
CollectorEmitter Voltage
160
V
VEBO
EmitterBase Voltage
5
V
IC
Collector CurrentContinuous Collector Power Dissipation @Ta=25℃
1.
5
A
2 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20
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