SSM6P47NU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type(U-MOS VI)
SSM6P47NU
Power Management Switch Applications
• • 1.
5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.
5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.
8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.
5 V) RDS(on) = 95 mΩ (max) (@VGS = -4.
5 V)
0.
75±0.
05 2.
0±0.
1
B A
Unit: mm
2.
0±0.
1
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP (Note 1) PD t 10s Tch Tstg Rating −20 ±8 −4.
0 −8.
0 1 2 150 −55 to 125 Unit
0~0.
05
0.
13
*BOTTOM VIEW
0.
65
0.
65 0.
95 0.
9±0.
075 0.
275±0.
1 0.
275±0.
1
0.
05 M A
1
2
3
V A
0.
86
0.
8...