Part Number
|
SSM6P49NU |
Manufacturer
|
Toshiba Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Sep 18, 2014 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS
SSM6P49NU
1. Applications
• Power Management Switches
2. Features
(1) 1.8 V drive (2) Low ...
|
Datasheet
|
SSM6P49NU
|
Overview
MOSFETs Silicon P-Channel MOS
SSM6P49NU
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 157 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
3.
Packaging and Pin Assignment
UDFN6
SSM6P49NU
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2016-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2010-11
2021-09-17 Rev.
2.
0
SSM6P49NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source volta...
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