SSM6N40TU
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type
SSM6N40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 4 V drive • N-ch 2-in-1 • Low ON-resistance:
Ron = 182mΩ (max) (@VGS = 4 V) Ron = 122mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
2.
0±0.
1 1.
3±0.
1 0.
65 0.
65
2.
1±0.
1 1.
7±0.
1
Unit: mm
+0.
1 0.
3-0.
05
1
6
2
5
3
4
0.
166±0.
05
0.
7±0.
05
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
1.
6 A
3.
2
Drain power dissipation
PD (Note1)
500
mW
UF6
1.
Source1 2.
Gate1 3.
Drain2
4.
Source2 5.
Gate2 6.
Drain1
Chan...