SSM6L40TU
TOSHIBA Field-Effect
Transistor Silicon N / P Channel MOS Type
SSM6L40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • N-ch: 4.
0-V drive P-ch: 4.
0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance
2.
1±0.
1 1.
7±0.
1
Unit: mm
Q1 N-ch: Ron = 182 mΩ (max) (@VGS = 4 V) Ron = 122 mΩ (max) (@VGS = 10 V) Q2 P-ch: Ron = 403 mΩ (max) (@VGS = -4 V) Ron = 226 mΩ (max) (@VGS = -10 V)
0.
65 0.
65
2 3
5 4
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse
Symbol VDSS VGSS ID IDP
Rating 30 ±20 1.
6 3.
2
Unit V V A
0.
7±0.
05
1.
Source1 2.
Gate1 3.
Drain2
4.
Source2 5.
Gate2 6.
Drain1
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics...