SSM5H05TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial
Schottky Barrier Diode
SSM5H05TU
DC-DC Converter
• • Combined Nch MOSFET and
Schottky Diode in one package.
Low RDS (ON) and low VF Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.
5 6.
0 0.
5 0.
8 150 Unit V V A
Drain power dissipation Channel temperature
W °C
DIODE
Absolute Maximum Ratings (Ta = 25°C)
SCHOTTKY
Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature S...