SSM5G10TU
Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial
Schottky Barrier Diode
SSM5G10TU
DC-DC Converter Applications
• • • 1.
8-V drive Combines a P-channel MOSFET and a
Schottky barrier diode in one package.
Low RDS(ON) and Low VF Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Rating −20 ±8 −1.
5 −3.
0 0.
5 W 0.
8 150 °C Unit V V A
UFV JEDEC
Schottky Barrier Diode (Ta = 25°C)
Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction tempera...