Composite Devices Silicon P-Channel MOS / Epitaxial
Schottky Barrier
SSM6G18NU
SSM6G18NU
1.
Applications
• Power Management Switches
2.
Features
(1) Combined a P-channel MOSFET and a
Schottky barrier diode in one package.
2.
1.
MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.
5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.
8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.
5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.
5 V)
2.
2.
Diode Features
(1) Low forward voltage: VF = 0.
48 V (typ.
) (@IF = 1000 mA)
3.
Packaging and Internal Circuit
UDFN6
1.
Anode 2.
N.
C.
3.
Drain 4.
Source 5.
Gate 6.
Cathode
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1
Toshiba Electronic Devices & Storage Corporation
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