SSM3K37CT
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K37CT
○ High Speed Switching Applications ○ Analog Switch Applications
Unit : mm
• 1.
5Vdrive • Low ON-resistance
RDS(ON) = 5.
60 Ω (max) (@VGS = 1.
5 V) RDS(ON) = 4.
05 Ω (max) (@VGS = 1.
8 V) RDS(ON) = 3.
02 Ω (max) (@VGS = 2.
5 V) RDS(ON) = 2.
20 Ω (max) (@VGS = 4.
5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
20
V
VGSS
± 10
V
ID
200
mA
IDP
400
PD(Note1)
100
mW
Tch
150
°C
Tstg
−55 to 150
°C
CST3
Note:
Using continuously under...