SSM5H11TU
Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial
Schottky Barrier Diode
SSM5H11TU
DC-DC Converter Applications
• • • 4.
0-V drive Combined an N-ch MOSFET and a
Schottky barrier diode in one package.
Low RDS(ON) and Low VF Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating 30 ± 20 1.
6 A 3.
2 500 150 mW °C Unit V V
Schottky Barrier Diode (Ta = 25°C)
Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF(AV) IFSM Tj Ratin...