SSM3K35FS
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM3K35FS
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.
2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.
2 V)
: Ron = 8 Ω (max) (@VGS = 1.
5 V) : Ron = 4 Ω (max) (@VGS = 2.
5 V) : Ron = 3 Ω (max) (@VGS = 4.
0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
±10
V
Drain current
DC
ID
Pulse
IDP
180 mA
360
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
JEDEC
-
Note: Using continuously under heavy loads (e.
g.
the appli...