SSM3K15AFS
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15AFS
Load Switching Applications
• 2.
5 V drive • Low ON-resistance: RDS(ON) = 3.
6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.
0 Ω (max) (@VGS = 2.
5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
100 mA
400
Power dissipation
PD
100
mW
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
SSM
1.
Gate 2.
Source 3.
Drain
Note: Using continuously under heavy loads (e.
g.
the application of
high temperature/current/voltage and the signifi...