SSM5P05FU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM5P05FU
Power Management Switch High Speed Switching Applications
· · · Small package Low on resistance : Ron = 3.
3 Ω (max) (@VGS = −4 V) : Ron = 4.
0 Ω (max) (@VGS = −2.
5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±12 -200 -400 300 150 -55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-2L1B
Note1: Total rating, mounted on FR4 board 2 (25.
4 mm ´ 25.
4 mm ´ 1.
6 t,...