SSM6P35FU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type
SSM6P35FU
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.
2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.
2 V)
: Ron = 22 Ω (max) (@VGS = -1.
5 V) : Ron = 11 Ω (max) (@VGS = -2.
5 V) : Ron = 8 Ω (max) (@VGS = -4.
0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2)
Characteristics
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
VDSS VGSS
ID IDP
-20
V
±10
V
-100 mA
-200
1.
SOURCE 1 2.
GATE 1 3.
DRAIN 2
4.
SOURCE 2 5.
GATE 2 6.
DRAIN 1
Drain power dissipation
PD (Note 1)
200
mW
JEDEC
-
Channel temperature
Tch
150
°C
JEI...