TK3A65DA
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK3A65DA
Switching
Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 2.
3 Ω(typ.
) • High forward transfer admittance: |Yfs| = 2.
2 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
Ф3.
2 ± 0.
2 10 ± 0.
3
A
Unit: mm
2.
7 ± 0.
2
3.
9 3.
0 15.
0 ± 0.
3
1.
14 ± 0.
15
2.
8 MAX.
13 ± 0.
5
Absolute Maximum Ratings (Ta = 25°C)
0.
69 ± 0.
15 Ф0.
2 M A
2.
6 ± 0.
1 4.
5 ± 0.
2
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avala...