TK5A65DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK5A65DA
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.
34 Ω (typ.
) High forward transfer admittance: |Yfs| = 3.
1 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive aval...