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Part Number
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TK7A90E |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon N-Channel MOSFET |
|
Published
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Sep 20, 2014 |
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Datasheet
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TK7A90E
|
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
T...
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