TK40M60U
MOSFETs Silicon N-Channel MOS (DTMOS)
TK40M60U
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
065 Ω (typ.
) High forward transfer admittance: |Yfs| = 30 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-3P(N)IS
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive av...