TK30A06J3A
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK30A06J3A
Switching
Regulator Applications
z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.
) High forward transfer admittance: |Yfs| = 34 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 30 90 25 40 30 2.
5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
Pulse (Note 1)
Dr...