TPCC8001-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOS -H)
TPCC8001-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
• • • • • • • Unit: mm
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.
1 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 7.
6 mΩ (typ.
) ( VGS = 4.
5 V) High forward transfer admittance: |Yfs| = 65 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain ...