TPCP8203
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
TPCP8203
Portable Equipment Applications Motor Drive Applications DC/DC Converters
• Lead (Pb)-free • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 8.
6 S (typ.
) • Low leakage current: IDSS = 10 μA (max)(VDS = 40 V) • Enhancement model: Vth = 1.
3 to 2.
5V
(VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5...