This product complies with the RoHS Directive (EU 2002/95/EC).
Power
Transistors
2SD2693, 2SD2693A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1724, 2SB1724A ■ Features
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
15.
0±0.
5
Unit: mm
9.
9±0.
3
3.
0±0.
5
4.
6±0.
2 2.
9±0.
2
φ 3.
2±0.
1
13.
7±0.
2 4.
2±0.
2 Solder Dip
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) (Base open) Collector current Peak collector current
*
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
2.
6±0.
1
Sym...