Part Number
|
AP9T19GJ |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 27, 2014 |
Detailed Description
|
AP9T19GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Si...
|
Datasheet
|
AP9T19GJ
|
Overview
AP9T19GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.
5V gate drive ▼ Single Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
12V 16mΩ 33A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current
1
Rating 12 ±12 33...
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