HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G (Z) 8th.
Edition June 1997 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1023R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –20 ±10 –7 –56 –7 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 2.
5 150 –55 to +150 1.
PW ≤ ...

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