HAT2040R Silicon N Channel Power MOS FET Power Switching ADE-208-565D (Z) 5th.
Edition February 1999 Features • • • • Capable of 4 V gate drive Low drive current High density mounting Low on-resistance R DS(on) =6.
2m typ Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2040R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 15 120 15 2.
5 150 –55 to +150 Unit V V A A A W °C °C 1.
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