HAT2064R Silicon N Channel Power MOS FET Power Switching ADE-208-930G (Z) 8th.
Edition May 2000 Features • • • • Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance R DS(on) = 5.
0 mΩ typ (at VGS = 10V) Outline SOP-8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2064R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Note2 Note2 Note1 Ratings 30 ± 20 16 128 ...

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