Part Number
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HY27US081G1M |
Manufacturer
|
Hynix Semiconductor |
Description
|
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
Published
|
Oct 9, 2014 |
Detailed Description
|
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27US081G1M HY27US161G1M
...
|
Datasheet
|
HY27US081G1M
|
Overview
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27US081G1M HY27US161G1M
This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 0.
2 / May.
2007 1
Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width.
- Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.
) STATUS REGISTER ELECTRON...
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